working gas造句
例句與造句
- We have a working gas station , movie theater
我們有加油站，電影院 - Target material was hexagonal boron nitride ( hbn ) and working gas was pure argon
用射頻濺射法在si襯底上制備立方氮化硼，靶材為hbn ， 。工作氣體為氬氣。 - While working gas was switched from ar in the first and second steps to ar + n2 in the third one
由第二步到第三步,工作氣體由氬氣變?yōu)闅鍤夂偷獨(dú)獾幕旌蠚怏w。 - Process parameters included rf power , substrate negative bias voltage , substrate temperature and working gas pressure
工藝參數(shù)有射頻功率、襯底負(fù)偏壓、襯底溫度和工作氣壓等。 - The nitrogen atoms involving in the chemical reaction originated from the working gas and nitrogen gas in the reactive chamber , and the latter is chief
噴涂過程中參與反應(yīng)的n元素來自離子氣和反應(yīng)室中的n _ 2氣，以后者為主。 - It's difficult to find working gas in a sentence. 用working gas造句挺難的
- Furthermore , the plasma optical emission spectra ( oes ) of the ionization of the working gases were analyzed in situ using a pr - 650 spectroscope
此外，本文使用pr ? 650光譜光度計(jì)，對(duì)p室的等離子體輝光光譜( oes )進(jìn)行了在線監(jiān)測(cè)。 - The results of the experiments using the helium - argon as the working gas have showed that the performance of the tadptr can be improved if we add some argon in the pure helium
實(shí)驗(yàn)結(jié)果表明在氦氣中加入適量的氬氣可以提高熱聲驅(qū)動(dòng)器的性能，從而提高其驅(qū)動(dòng)的脈管制冷性能。 - The influence of various factors , such as substrate bias voltage and temperature , working gas pressure , types of si wafer , etc . on the preparation of cbn has been studied systematically
系統(tǒng)地研究了襯底偏壓、襯底溫度、工作氣壓、 si晶片的類型等多種因素對(duì)制備cbn薄膜的影響。 - In the paper , the structure type of torpedo turbine engine and the three - speed system states of work gas were researched . the work process of torpedo turbine engine was analyzed
本文對(duì)魚雷渦輪機(jī)結(jié)構(gòu)類型、魚雷渦輪機(jī)的三速制工況進(jìn)行了計(jì)算研究，對(duì)渦輪發(fā)動(dòng)機(jī)的工作過程進(jìn)行了分析。 - Boron nitride ( bn ) thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system , with hexagonal boron nitride ( hbn ) target and working gas of argon ( or mixture of nitrogen and argon )
使用射頻濺射( rf )系統(tǒng),靶材為燒結(jié)的六角氮化硼( hbn ) ,工作氣體為氬氣(或氬氣和氮?dú)獾幕旌蠚? ,在硅襯底上沉積氮化硼薄膜。 - C - bn with higher adherence was synthesized on si ( 111 ) substrate by the two - step approach , the substrate temperature or the bias voltage as a parameter of particular interest was reduced when switching working gas from ar in the first to mixed ar n2 in the second step
該兩步法將沉積過程分為成核和生長(zhǎng)兩個(gè)階段，第一步轉(zhuǎn)換第二步，工作氣體由ar氣變?yōu)閍r和n2的混合氣體，同時(shí)襯底溫度和偏壓降為較低的值。 - 1 successively depositing cbn thin films on si substrates which reaches international advanced level , the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied . boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system . the target was hexagonal boron nitride ( hbn ) of 4n purity , and the working gas was the mixture of nitrogen and argon
研究了襯底負(fù)偏壓和射頻功率對(duì)制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達(dá)99 . 99 ） ，濺射氣體為氬氣和氮?dú)饣旌隙?，制樣過程中，襯底加直流負(fù)偏壓。 - And there exists some functional relationship between the quantity of the hydrogen and the drop of the readout intensity of the rlg . usually a rlg is defined failed when the readout intensity drops to the 1 / e percent of the initial value , so a new idea that using the quantity of the hydrogen contained in the work gas to predict the life time of the rlg is put forward in this paper
論文通過對(duì)比發(fā)現(xiàn),工作氣體中所含有的雜質(zhì)氣體氫氣會(huì)加劇這兩種因素對(duì)壽命的影響,并且氫含量的多少與激光陀螺儀輸出功率下降之間存在著某種函數(shù)關(guān)系,而當(dāng)激光陀螺輸出功率下降到初始強(qiáng)度的1 / e時(shí)就可以判定陀螺失效。 - It is concluded that for cvd method the cubic phase content and adhesion are highly effected by the crystal lattice mismatch between c - bn and substrate materials , however , for sputter method the crystal lattice mismatch between c - bn and substrate materials affects the quality of c - bn thin films very little . 5 n - type doping of bn thin films and preparing of bn ( n - type ) / si ( p - type ) heterojunctions adding s into the mixture of argon and nitrogen used as working gas , we sputtered 1ibn target to deposit bn thin films so as to study the n - type doping of bn thin films , and bn ( n - type ) / si ( p - type ) heterojunctions were prepared
5實(shí)現(xiàn)了氮化硼薄膜的n型摻雜，成功制備出bn型）乃…型）異質(zhì)結(jié)并且首次系統(tǒng)研究了其卜v和cv特性我們用射頻濺射法濺射六角氨化硼靶，在工作氣體氮和氮中混入s ，沉積氮化硼薄膜，以研究氮化硼薄膜的n型摻雜，并得到bnh型）侶i …型）異質(zhì)結(jié)。 - With the helium as the working gas , we attained 119 . 7k the refrigeration temperature of the pulse tube . this is the first time that it enters the cryogenic field using the thermocaoustic engine in china . 2 ) the application of binary noble gas on tadptr after the discuss of the possibility of applying binary noble gas on tadptr , we give the way to calculate the prandtl number of the binary noble gas
混合工質(zhì)應(yīng)用于熱聲驅(qū)動(dòng)的脈管制冷機(jī)對(duì)惰性氣體二元混合工質(zhì)在熱聲機(jī)械中的可能應(yīng)用進(jìn)行了探討，給出了混合工質(zhì)的普朗特?cái)?shù)等參數(shù)的計(jì)算方法，并進(jìn)行了采用氦-氬混合工質(zhì)的熱聲驅(qū)動(dòng)脈管制冷機(jī)的實(shí)驗(yàn)研究。
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